是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.58 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 32 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 180 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 功耗环境最大值: | 2 W |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.8 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SD1766T101 | ROHM | Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, |
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2SD1766T101/P | ROHM | Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, |
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2SD1766T101/PQ | ROHM | Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD1766T101/PR | ROHM | Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD1766T101/QR | ROHM | Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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2SD1766T101Q | ROHM | 2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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