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2SD1766T100QR PDF预览

2SD1766T100QR

更新时间: 2024-11-05 13:04:23
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 171K
描述
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,

2SD1766T100QR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.63
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSSO-F3JESD-609代码:e2
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
功耗环境最大值:2 W认证状态:Not Qualified
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.8 VBase Number Matches:1

2SD1766T100QR 数据手册

 浏览型号2SD1766T100QR的Datasheet PDF文件第2页浏览型号2SD1766T100QR的Datasheet PDF文件第3页浏览型号2SD1766T100QR的Datasheet PDF文件第4页 
Medium power transistor (32V, 2A)  
2SD1766 / 2SD1758 / 2SD1862  
Features  
Dimensions (Unit : mm)  
1) Low VCE(sat).  
VCE(sat) = 0.5V (Typ.)  
(IC/IB = 2A / 0.2A)  
2) Complements the 2SB1188 / 2SB1182 / 2SB1240  
2SD1766  
2SD1758  
+
0.2  
4.5  
+0.2  
0.1  
2.3  
6.5 0.2  
0.1  
+
0.2  
1.5  
C0.5  
1.6 0.1  
0.1  
+0.2  
5.1  
0.5 0.1  
0.1  
(1) (2) (3)  
0.65 0.1  
+
0.1  
0.75  
0.4  
Structure  
0.05  
0.9  
0.5 0.1  
3.0 0.2  
0.4 0.1  
1.5 0.1  
0.4 0.1  
1.5 0.1  
Epitaxial planar type NPN silicon transistor  
0.55 0.1  
1.0 0.2  
2.3 0.2 2.3 0.2  
(1) (2) (3)  
Abbreviated symbol : DB∗  
ROHM : MPT3  
EIAJ : SC-62  
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : CPT3  
EIAJ : SC-63  
(1) Base  
(2) Collector  
(3) Emitter  
2SD1862  
2.5 0.2  
6.8 0.2  
0.65Max.  
0.5 0.1  
(1) (2)  
2.54  
(3)  
2.54  
1.05  
0.45 0.1  
ROHM : ATV  
(1) Emitter  
(2) Collector  
(3) Base  
Denotes hFE  
Absolute maximum ratings (Ta=25C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
40  
32  
5
Unit  
VCBO  
VCEO  
VEBO  
V
V
V
2
A (DC)  
A (Pulse)  
Collector current  
I
C
1  
2.5  
0.5  
2
W
2SD1766  
Collector  
2  
3  
power  
dissipation  
P
C
2SD1758  
2SD1862  
10  
1
W (TC=25°C)  
W
°C  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55~+150  
1 Single pulse, PW=20ms  
2 When mounted on a 40×40×0.7 mm ceramic board.  
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.  
www.rohm.com  
2009.12 - Rev.B  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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