Datasheet > 2SD1767

2SD1767

更新时间： 2024-11-25 14:53:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1577K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SD1767 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SD1767

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

High Breakdown Voltage and Current

Excellent DC Current Gain Linearity

Complement the 2SB1189

3. EMITTER

MARKING

DCP

DCQ

DCR

Solid dot = Green molding compound device.

82–180

120–270

180–390

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

700

℃/W

℃

P_C

Collector Power Dissipation

500

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=50µA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=2mA,I_B=0

I_E=50µA,I_C=0

V_CB=50V,I_E=0

0.5

390

0.4

µA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=3V, I_C=100mA

I_C=500mA,I_B=50mA

V^CE=10V,I^C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

82–180

120–270

180–390

MARKING

DCP

DCQ

DCR

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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2SD1767T100/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
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2SD1767T100R	ROHM	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SC-62,