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2SD1767 PDF预览

2SD1767

更新时间: 2024-11-25 18:09:35
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
4页 577K
描述
SOT-89

2SD1767 数据手册

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2SD1767  
BIPOLAR TRANSISTOR (NPN)  
FEATURES  
Complementary to 2SB1189  
Excellent hFE Linearity  
High Breakdown Voltage and Current  
Surface Mount device  
SOT-89  
MECHANICAL DATA  
Case: SOT-89  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.055 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VCBO  
Value  
80  
Unit  
V
Collector-Base Voltage  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
VEBO  
5
V
Collector Current  
IC  
700  
500  
250  
150  
mA  
mW  
°C/W  
°C  
Collector Power Dissipation  
PC  
RθJA  
TJ  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
Storage Temperature  
TSTG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
I =50uA I =0  
V(BR)CBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
80  
80  
5
V
V
E
C
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=2mAIB=0  
V
IE=50uAIC=0  
0.5  
0.5  
390  
0.4  
uA  
uA  
VCB=50V, IE=0  
Emitter cut-off current  
VEB=4V, IC=0  
IEBO  
DC current gain  
hFE  
82  
VCE=3V, IC=100mA  
IC=500mAIB=50mA  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
VCE=10V,IC=50mA,f=100  
120  
10  
MHz  
pF  
MHz  
VCB=10V, IE=0, f=1  
MHz  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE  
Rank  
P
Q
R
Range  
82-180  
DCP  
120-270  
DCQ  
180-390  
DCR  
Marking  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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