型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1766T101/PQ | ROHM |
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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SD1766T101/PR | ROHM |
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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SD1766T101/QR | ROHM |
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Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SD1766T101Q | ROHM |
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2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1766U | SWST |
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功率三极管 | |
2SD1766U-AH | SWST |
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功率三极管 | |
2SD1767 | ROHM |
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MEDIUM POWER TRANSISTOR | |
2SD1767 | SECOS |
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0.7A , 80V NPN Plastic Encapsulated Transistor | |
2SD1767 | KEXIN |
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Medium Power Transistor | |
2SD1767 | TYSEMI |
获取价格 |
High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. |