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2SD1766T100/QR PDF预览

2SD1766T100/QR

更新时间: 2024-02-05 10:43:06
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 171K
描述
2A, 32V, NPN, Si, POWER TRANSISTOR

2SD1766T100/QR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-62
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliant风险等级:5.58
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSSO-F3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:2 W
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.8 V
Base Number Matches:1

2SD1766T100/QR 数据手册

 浏览型号2SD1766T100/QR的Datasheet PDF文件第2页浏览型号2SD1766T100/QR的Datasheet PDF文件第3页浏览型号2SD1766T100/QR的Datasheet PDF文件第4页 
Medium power transistor (32V, 2A)  
2SD1766 / 2SD1758 / 2SD1862  
Features  
Dimensions (Unit : mm)  
1) Low VCE(sat).  
VCE(sat) = 0.5V (Typ.)  
(IC/IB = 2A / 0.2A)  
2) Complements the 2SB1188 / 2SB1182 / 2SB1240  
2SD1766  
2SD1758  
+
0.2  
4.5  
+0.2  
0.1  
2.3  
6.5 0.2  
0.1  
+
0.2  
1.5  
C0.5  
1.6 0.1  
0.1  
+0.2  
5.1  
0.5 0.1  
0.1  
(1) (2) (3)  
0.65 0.1  
+
0.1  
0.75  
0.4  
Structure  
0.05  
0.9  
0.5 0.1  
3.0 0.2  
0.4 0.1  
1.5 0.1  
0.4 0.1  
1.5 0.1  
Epitaxial planar type NPN silicon transistor  
0.55 0.1  
1.0 0.2  
2.3 0.2 2.3 0.2  
(1) (2) (3)  
Abbreviated symbol : DB∗  
ROHM : MPT3  
EIAJ : SC-62  
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : CPT3  
EIAJ : SC-63  
(1) Base  
(2) Collector  
(3) Emitter  
2SD1862  
2.5 0.2  
6.8 0.2  
0.65Max.  
0.5 0.1  
(1) (2)  
2.54  
(3)  
2.54  
1.05  
0.45 0.1  
ROHM : ATV  
(1) Emitter  
(2) Collector  
(3) Base  
Denotes hFE  
Absolute maximum ratings (Ta=25C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
40  
32  
5
Unit  
VCBO  
VCEO  
VEBO  
V
V
V
2
A (DC)  
A (Pulse)  
Collector current  
I
C
1  
2.5  
0.5  
2
W
2SD1766  
Collector  
2  
3  
power  
dissipation  
P
C
2SD1758  
2SD1862  
10  
1
W (TC=25°C)  
W
°C  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55~+150  
1 Single pulse, PW=20ms  
2 When mounted on a 40×40×0.7 mm ceramic board.  
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.  
www.rohm.com  
2009.12 - Rev.B  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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