Datasheet > 2SD1766-R

2SD1766-R

更新时间： 2024-09-24 01:07:03

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	248K
描述
2A, 40V NPN Epitaxial Planar Transistor

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2SD1766-R 数据手册

2SD1766

2A, 40V

NPN Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

DESCRIPTION

The 2SD1766 is suited for the output stage of 0.5W audio,

voltage regulator, and relay driver.

CLASSIFICATION OF h_FE

2SD1766-P

82~180

DBP

2SD1766-Q

120~270

DBQ

2SD1766-R

180~390

DBR

Product Rank

1. Base

Range

2. Collector

3. Emitter

Marking

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

4.40

3.94

1.40

2.30

4.60

4.25

1.60

2.60

0.40

1.50 TYP

3.00 TYP

0.32

0.35

0.58

PACKAGE INFORMATION

Collector

0.52

0.44

Package

MPQ

Leader Size

7’ inch

1.50

0.89

1.70

1.20

SOT-89

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Power Dissipation

Junction & Storage temperature

V_CBO

V_CEO

V_EBO

I_C

P_D

T_J, T_STG

5.0

2.0

0.5

°C

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

V_(BR)CBO

I_C= 50 µA, I_E=0

Collector-emitter breakdown

voltage

V_(BR)CEO

I_C= 1 mA, I_B=0

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBO

I_CBO

5.0

I_E= 50 µA, I_C=0

V_CB= 20 V, I_E=0

V_EB= 4 V, I_C=0

µA

I_EBO

DC current gain

h_FE

390

0.8

V_CE= 3 V, I_C= 0.5 A

I_C= 2 A, I_B= 0.2 A

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f _T

100

MHz V_CE=5V, I_E=50mA, f=100MHz

Output Capacitance

C_OB

V_CB=10V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Nov-2014 Rev. A

Page 1 of 2

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