Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features
Dimensions (Unit : mm)
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1188 / 2SB1182 / 2SB1240
2SD1766
2SD1758
+
0.2
4.5
+0.2
−
0.1
2.3
6.5 0.2
−0.1
+
0.2
1.5
C0.5
1.6 0.1
−
0.1
+0.2
5.1
0.5 0.1
−0.1
(1) (2) (3)
0.65 0.1
+
0.1
0.75
0.4
Structure
−
0.05
0.9
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
Epitaxial planar type NPN silicon transistor
0.55 0.1
1.0 0.2
2.3 0.2 2.3 0.2
(1) (2) (3)
Abbreviated symbol : DB∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD1862
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
40
32
5
Unit
VCBO
VCEO
VEBO
V
V
V
2
A (DC)
A (Pulse)
Collector current
I
C
∗1
2.5
0.5
2
W
2SD1766
Collector
∗2
∗3
power
dissipation
P
C
2SD1758
2SD1862
10
1
W (TC=25°C)
W
°C
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55~+150
∗1 Single pulse, PW=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
www.rohm.com
2009.12 - Rev.B
1/3
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