2SD1766T100/P

更新时间： 2024-02-25 06:17:08

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2SD1766T100/P 数据手册

2SD1766 / 2SD1758 / 2SD1862

Data Sheet

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ. Max.

Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−

=50μA

=1mA

Collector-emitter breakdown voltage BVCEO

Emitter-base breakdown voltage

Collector cutoff current

BVEBO

−

=50μA

CB=20V

EB=4V

CBO

EBO

CE(sat)

−

μA

−

Emitter cutoff current

−

∗

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

120

−

390

0.8

−

CE=3V, I =0.5A

∗

0.5

100

CE=5V, I

CB=10V, I

=2A / 0.2A

=−50mA, f=100MHz

=0A, f=1MHz

−

MHz

Output capacitance

Cob

−

Measured using pulse current.

∗

Packaging specifications and h^FE

Package

Taping

Code

Basic ordering

unit (pieces)

T100

1000

TV2

2500

−

2500

Type

hFE

2SD1766

2SD1758

2SD1862

−

h^FEvalues are classified as follows :

Item

hFE

120 to 270 180 to 390

 Electrical characteristic curves

0.5

0.4

0.3

0.2

Ta=25°C

2000

Ta=25°C

3.0mA

2.7mA

2.4mA

2.1mA

1.8mA

1.5mA

1.2mA

CE=3V

500

1000

500

200

100

200

100

CE=3V

0.9mA

0.6mA

0.3mA

0.1

IB=0A

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

BASE TO EMITTER VOLTAGE : VBE (V)

0.4

0.8

1.2

1.6

2.0

10 20

50 100 200 500 1A 2A

(mA)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

COLLECTOR CURRENT : I

Fig.1 Grounded emitter propagation

characteristics

Fig.2 Grounded emitter output

characteristics

Fig.3 DC current gain vs. collector

current

1000

Ta=25°C

CE=5V

Ta=25°C

500

IC/IB=10

200

100

200

100

0.5

IC/IB=50

0.2

0.1

10 20 50 100 200 500 1A 2A

−1 −2

10 20

50 100 200 500 1A 2A

(mA)

−5 −10 −20 −50−100−200 −500 −1A

EMITTER CURRENT : I (mA)

COLLECTOR CURRENT : I

COLLECTOR CURRENT : I (mA)

Fig.4 Collector-emitter saturation

voltage vs. collector current

Fig.5 Collector-emitter saturation

voltage vs. collector current

Fig.6 Transition frequency vs. emitter

current

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2009.12 - Rev.B

2/3

123 4

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