Datasheet > 2SD1658_07

2SD1658_07

更新时间： 2024-09-24 04:26:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	191K
描述
Silicon NPN Epitaxial Type (Darlington Power Transistor)

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中文翻译

获取价格

数据手册

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2SD1658_07 数据手册

2SD1658

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD1658

Micro Motor Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h

= 2000 (min) (V = 2 V, I = 1 A)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 1 A, I = 1 mA)

CE (sat)

Zener diode included between collector and base

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

60 ± 10

CBO

CEO

EBO

Base current

0.5

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

1.5

Collector power

dissipation

TOSHIBA

2-8H1A

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Weight: 0.82 g (typ.)

Equivalent Circuit

COLLECTOR

BASE

≈ 4 kΩ

≈ 800 Ω

EMITTER

2004-07-26

12 3 4 5

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与2SD1658_07相关器件

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2SD1658_09	TOSHIBA	获取价格	Micro Motor Drive, Hammer Drive Applications
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2SD1660MA	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
2SD1660MC2	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
2SD1660MC2A	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
2SD1660MC2C	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
2SD1661M	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| SIP
2SD1661MA	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon
2SD1661MB	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon
2SD1661MC	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon