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2SD1653 PDF预览

2SD1653

更新时间: 2024-11-04 06:20:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 226K
描述
Silicon NPN Power Transistor

2SD1653 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD1653 数据手册

 浏览型号2SD1653的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1653  
DESCRIPTION  
·High Breakdown Voltage-  
: VCBO= 1500V (Min)  
·High Switching Speed  
·High Reliability  
APPLICATIONS  
·Color TV horizontal deflection output applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltge  
Emitter-Base Voltage  
VALUE  
1500  
800  
UNIT  
V
V
6
V
Collector Current- Continuous  
Collector Current-Pulse  
2.5  
A
ICP  
10  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
50  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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