Datasheet > 2SD1478Q

2SD1478Q

更新时间： 2024-11-20 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	65K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 25V V(BR)CEO \| 200MA I(C) \| TO-236AB

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中文翻译

获取价格

数据手册

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2SD1478Q 数据手册

Transistor

2SD1478, 2SD1478A

Silicon NPN epitaxial planer type darlington

Unit: mm

2.8 –⁺0⁰.^.3²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

For low-frequency amplification

0.65±0.15

Features

■

●

Forward current transfer ratio h_FEis designed high, which is ap-

propriate to the driver circuit of motors and printer bammer: h_FE

= 4000 to 20000.

●

A shunt resistor is omitted from the driver.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

Unit

0.1 to 0.3

0.4±0.2

2SD1478

Collector to

base voltage

Collector to

emitter voltage

V_CBO

2SD1478A

2SD1478

1:Base

2:Emitter

JEDEC:TO–236

EIAJ:SC–59

V_CEO

2SD1478A

3:Collector

Mini Type Package

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

˚C

(2SD1478)

(2SD1478A)

Marking symbol : 2N

Internal Connection

750

500

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

Collector cutoff current

Emitter cutoff current

V_CB= 25V, I_E= 0

_EB= 4V, I_C= 0

I_EBO

Collector to base

voltage

2SD1478

2SD1478A

V_CBO

I_C= 100µA, I_E= 0

Collector to emitter 2SD1478

I_C= 1mA, I_B= 0

V_CEO

V_EBO

voltage

2SD1478A

I_C= 1mA, I_B= 0

Emitter to base voltage

I_E= 100µA, I_C= 0

V_CE= 10V, I_C= 500mA^*2

I_C= 500mA, I_B= 0.5mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

4000

20000

2.5

Forward current transfer ratio

h_FE

Collector to emitter saturation voltage V_CE(sat)

Base to emitter voltage

Transition frequency

V_BE(sat)

f_T

3.0

200

MHz

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

4000 ~ 10000 8000 ~ 20000

2SD1478

2NQ

2OQ

2NR

2OR

Marking

Symbol

2SD1478A

12 3

中文翻译

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