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2SD1481-AZ PDF预览

2SD1481-AZ

更新时间: 2024-11-21 13:04:23
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 110K
描述
Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SD1481-AZ 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:70 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SD1481-AZ 数据手册

 浏览型号2SD1481-AZ的Datasheet PDF文件第2页浏览型号2SD1481-AZ的Datasheet PDF文件第3页浏览型号2SD1481-AZ的Datasheet PDF文件第4页 
DATA SHEET  
SILICON POWER TRANSISTOR  
2SD1481  
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
• On-chip C-to-B Zener diode for surge voltage absorption  
• Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A)  
• Ideal for use in a direct drive from IC to the devices such as OA  
and FA equipment and motor solenoid relay printer head drivers  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
Ratings  
60 10  
60 10  
7.0  
Unit  
V
VCEO  
V
VEBO  
V
IC(DC)  
2.0  
A
Collector current  
IC(pulse)*  
IB(DC)  
4.0  
A
Base current  
0.2  
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
15  
W
W
°C  
°C  
1.5  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
ꢀꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢆꢊꢊꢂꢃꢄꢋꢆꢊ  
ꢌꢍꢈꢎꢏꢐꢂ  
ꢑꢍꢈꢉꢆꢁꢁꢂꢃꢄꢆꢅ  
ꢒꢍꢈꢀꢓꢋꢄꢄꢂꢅ  
ꢔꢍꢈꢕꢋꢊꢈꢖꢃꢆꢁꢁꢂꢃꢄꢆꢅꢗ  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16189EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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