Datasheet > 2SD1478R

2SD1478R

更新时间： 2024-11-24 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	65K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 25V V(BR)CEO \| 200MA I(C) \| TO-236AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1478R 数据手册

Transistor

2SD1478, 2SD1478A

Silicon NPN epitaxial planer type darlington

Unit: mm

2.8 –⁺0⁰.^.3²

1.5 ⁺^–0⁰^.^.⁰²⁵⁵

For low-frequency amplification

0.65±0.15

Features

■

●

Forward current transfer ratio h_FEis designed high, which is ap-

propriate to the driver circuit of motors and printer bammer: h_FE

= 4000 to 20000.

●

A shunt resistor is omitted from the driver.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

Unit

0.1 to 0.3

0.4±0.2

2SD1478

Collector to

base voltage

Collector to

emitter voltage

V_CBO

2SD1478A

2SD1478

1:Base

2:Emitter

JEDEC:TO–236

EIAJ:SC–59

V_CEO

2SD1478A

3:Collector

Mini Type Package

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

˚C

(2SD1478)

(2SD1478A)

Marking symbol : 2N

Internal Connection

750

500

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

Collector cutoff current

Emitter cutoff current

V_CB= 25V, I_E= 0

_EB= 4V, I_C= 0

I_EBO

Collector to base

voltage

2SD1478

2SD1478A

V_CBO

I_C= 100µA, I_E= 0

Collector to emitter 2SD1478

I_C= 1mA, I_B= 0

V_CEO

V_EBO

voltage

2SD1478A

I_C= 1mA, I_B= 0

Emitter to base voltage

I_E= 100µA, I_C= 0

V_CE= 10V, I_C= 500mA^*2

I_C= 500mA, I_B= 0.5mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

4000

20000

2.5

Forward current transfer ratio

h_FE

Collector to emitter saturation voltage V_CE(sat)

Base to emitter voltage

Transition frequency

V_BE(sat)

f_T

3.0

200

MHz

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

4000 ~ 10000 8000 ~ 20000

2SD1478

2NQ

2OQ

2NR

2OR

Marking

Symbol

2SD1478A

12 3

中文翻译

下载PDF

与2SD1478R相关器件

型号	品牌	获取价格	描述	数据表
2SD1478TSK	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
2SD1479	ISC	获取价格	Silicon NPN Power Transistors
2SD1479	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD1480	ISC	获取价格	Silicon NPN Power Transistor
2SD1480	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For power amplification)
2SD1480P	ISC	获取价格	Transistor
2SD1480Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| SOT-186
2SD1480R	ISC	获取价格	Transistor
2SD1481	NEC	获取价格	SILICON POWER TRANSISTOR
2SD1481-AZ	NEC	获取价格	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3