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2SD1480P PDF预览

2SD1480P

更新时间: 2024-11-21 20:14:27
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
2页 235K
描述
Transistor

2SD1480P 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SD1480P 数据手册

 浏览型号2SD1480P的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1480  
DESCRIPTION  
·Low Collector Saturation Voltage  
: VCE(sat)= 2.0V(Max)@ IC= 2A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 60V (Min)  
·Good Linearity of hFE  
·Complement to Type 2SB1052  
APPLICATIONS  
·Designed for power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emtter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
6
V
V
V
A
A
60  
6
Collector Current-Continuous  
Collector Current-Peak  
2
ICM  
4
25  
Collector Power Dissipation  
@ TC=25℃  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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