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2SD1480 PDF预览

2SD1480

更新时间: 2024-11-21 06:20:31
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无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
2页 229K
描述
Silicon NPN Power Transistor

2SD1480 数据手册

 浏览型号2SD1480的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SD1480  
DESCRIPTION  
·Low Collector Saturation Voltage  
: VCE(sat)= 2.0V(Max)@ IC= 2A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 60V (Min)  
·Good Linearity of hFE  
·Complement to Type 2SB1052  
APPLICATIONS  
·Designed for power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emtter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
6
V
V
V
A
A
60  
6
Collector Current-Continuous  
Collector Current-Peak  
2
ICM  
4
25  
Collector Power Dissipation  
@ TC=25℃  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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