Datasheet > 2SD1480Q

2SD1480Q

更新时间： 2024-11-24 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	48K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| SOT-186

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中文翻译

获取价格

数据手册

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2SD1480Q 数据手册

Power Transistors

2SD1480

Silicon NPN triple diffusion planar type

For power amplification

Unit: mm

Complementary to 2SB1052

10.0±0.2

5.5±0.2

4.2±0.2

2.7±0.2

Features

■

●

High forward current transfer ratio h_FEwhich has satisfactory

linearity

φ3.1±0.1

●

Low collector to emitter saturation voltage V_CE(sat)

●

Full-pack package which can be installed to the heat sink with

one screw

1.3±0.2

1.4±0.1

Absolute Maximum Ratings (T =25˚C)

■

+0.2

–0.1

0.5

0.8±0.1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

2.54±0.25

5.08±0.5

1:Base

2:Collector

3:Emitter

I_C

TO–220 Full Pack Package(a)

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CES

Conditions

min

typ

max

200

300

Unit

µA

V_CE= 60V, V_BE= 0

V_CE= 30V, I_B= 0

Collector cutoff current

I_CEO

I_EBO

V_CEO

h_FE1

Emitter cutoff current

V_EB= 6V, I_C= 0

Collector to emitter voltage

I_C= 30mA, I_B= 0

V_CE= 4V, I_C= 0.1A

V_CE= 4V, I_C= 1A

Forward current transfer ratio

Base to emitter voltage

h_FE2

250

1.2

V_BE

V_CE= 4V, I_C= 1A

Collector to emitter saturation voltage V_CE(sat)

I_C= 2A, I_B= 0.2A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 1MHz

0.2

3.5

0.7

MHz

µs

I_C= 1A, I_B1= 0.1A, I_B2= – 0.1A,

V_CC= 50V

µs

^*h_FE2Rank classification

Rank

h_FE2

70 to 150

120 to 250

12 3

中文翻译

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