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2SD1306_11 PDF预览

2SD1306_11

更新时间: 2024-11-02 12:53:35
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 109K
描述
Silicon NPN Epitaxial

2SD1306_11 数据手册

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Preliminary Datasheet  
R07DS0280EJ0300  
(Previous: REJ03G0784-0200)  
Rev.3.00  
2SD1306  
Silicon NPN Epitaxial  
Mar 28, 2011  
Application  
Low frequency amplifier, Muting  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
1. Emitter  
2. Base  
3
3. Collector  
1
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
Ratings  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
30  
15  
V
5
0.7  
V
A
Collector power dissipation  
Junction temperature  
PC  
150  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
R07DS0280EJ0300 Rev.3.00  
Mar 28, 2011  
Page 1 of 5  

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