Datasheet > 2SD1311

2SD1311

更新时间： 2024-11-02 12:20:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	245K
描述
isc Silicon NPN Power Transistor

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2SD1311 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD1311

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 100V(Min)

·Low Collector Saturation Voltage-

: V_CE(sat)= 1.5V(Max.)@I_C= 3A

APPLICATIONS

·Designed for audio frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

100

7.0

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

0.6

Collector Power Dissipation

@ T_a=25℃

1.3

P_C

Collector Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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2SD1312-L	NEC	获取价格	暂无描述
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2SD1313	MOSPEC	获取价格	POWER TRANSISTORS(25A,350V,200W)