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2SD1306-D PDF预览

2SD1306-D

更新时间: 2024-11-02 12:59:23
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 71K
描述
SMALL SIGNAL TRANSISTOR

2SD1306-D 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.3
JESD-30 代码:R-PDSO-G3端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

2SD1306-D 数据手册

 浏览型号2SD1306-D的Datasheet PDF文件第2页浏览型号2SD1306-D的Datasheet PDF文件第3页浏览型号2SD1306-D的Datasheet PDF文件第4页浏览型号2SD1306-D的Datasheet PDF文件第5页浏览型号2SD1306-D的Datasheet PDF文件第6页 
2SD1306  
Silicon NPN Epitaxial  
REJ03G0784-0200  
(Previous ADE-208-1144)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency amplifier, Muting  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
1. Emitter  
2. Base  
3
3. Collector  
1
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
Ratings  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
30  
15  
V
5
0.7  
V
A
Collector power dissipation  
Junction temperature  
PC  
150  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  

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