生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 23 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 210 |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1304S | PANASONIC |
获取价格 |
Si NPN Epitaxial Planar | |
2SD1304TMG | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 17V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1304TSK | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 17V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1306 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SD1306 | HITACHI |
获取价格 |
Silicon NPN Epitaxial | |
2SD1306 | CJ |
获取价格 |
SOT-23 | |
2SD1306_11 | RENESAS |
获取价格 |
Silicon NPN Epitaxial | |
2SD1306D | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), NPN, MPAK-3 | |
2SD1306-D | HITACHI |
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SMALL SIGNAL TRANSISTOR | |
2SD1306-D | RENESAS |
获取价格 |
SMALL SIGNAL TRANSISTOR |