Datasheet > 2SD1119

2SD1119

更新时间： 2024-09-16 06:23:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	50K
描述
Silicon NPN epitaxial planar type

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中文翻译

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数据手册

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2SD1119 数据手册

SMD Type

Transistors

Silicon NPN epitaxial planar type

2SD1119

Features

Low collector-emitter saturation voltage VCE(sat).

Satisfactory operation performances at high efficiency with

the lowvoltage power supply.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

IC = 1 mA, IB = 0

Min

Typ

Max

Unit

Collector-emitter voltage

Emitter-base voltage

V^CEO

V^EBO

I^CBO

IE = 10 ìA, IC = 0

VCB = 10 V, IB = 0

V^CE= 2 V, IC = 0.5 A

V^CE= 2 V, IC = 2 A

Collector-base cutoff current

0.1

ìA

230

150

600

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Transition frequency

V^CE(sat)IC = 3 A, IB = 0.1 A

f^T

VCB = 6 V, IE = -50 mA, f = 200 MHz

VCB = 20 V, IE = 0, f = 1 MHz

150

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

230 380

340 600

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