Datasheet > 2SD1119-Q

2SD1119-Q

更新时间： 2024-11-07 01:14:15

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1119-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1119

1.70 0.1

■ Features

● Collector Current Capability IC=3 A

● Collector Emitter Voltage V^CEO=25 V

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 uA， I = 0

Ic= 1 mA， I = 0

= 100 uA， I

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

CB= 40 V , I

EB= 7V , I

= 0

0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=3 A, I

=100 mA

C=3 A, I

1.2

600

CE= 2V, I

= 500mA

= 2 A

230

150

DC current gain

hFE

Collector output capacitance

Transition frequency

Cob

CB= 20V, I

E= 0,f=1MHz

^CE= 6V, I = 50 mA,f=200MHz

150

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1119-Q

230-380

2SD1119-R

340-600

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