Datasheet > 2SD1119R

2SD1119R

更新时间： 2024-09-15 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	51K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 3A I(C) \| SOT-89

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中文翻译

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数据手册

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2SD1119R 数据手册

Transistor

2SD1119

Silicon NPN epitaxial planer type

For low-frequency power amplification

Unit: mm

1.5±0.1

4.5±0.1

1.6±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Satisfactory operation performances at high efficiency with the

low-voltage power supply.

45°

●

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

0.4±0.08

0.4±0.04

0.5±0.08

1.5±0.1

3.0±0.15

Absolute Maximum Ratings (Ta=25˚C)

■

marking

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

I_C

Marking symbol : T

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 10V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

0.1

V_CEO

V_EBO

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 2A^*2

230

150

600

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

I_C= 3A, I_B= 0.1A^*2

MHz

Transition frequency

f_T

V_CB= 6V, I_E= –50mA, f = 200MHz

V_CB= 20V, I_E= 0, f = 1MHz

150

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

230 ~ 380

340 ~ 600

Marking Symbol

12 3

中文翻译

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