Datasheet > 2SD0958T

2SD0958T

更新时间： 2024-11-17 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	64K
描述
TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 20MA I(C) \| SC-71

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中文翻译

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数据手册

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2SD0958T 数据手册

Transistor

2SD0958 (2SD958)

Silicon NPN epitaxial planer type

For high breakdown voltage and low-noise amplification

Complementary to 2SB0788 (2SB788)

Unit: mm

6.9 0.1

2.5 0.1

1.0

1.5

1.5 R0.9

Features

High collector to emitter voltage V_CEO

R0.9

Low noise voltage NV.

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

0.55 0.1

0.45 0.05

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

120

2.5

˚C

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CB= 50V, I_E= 0

I_CEO

V_CE= 50V, I_B= 0

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

V_CBO

V_CEO

V_EBO

120

I_E= 10µA, I_C= 0

V_CE= 5V, I_C= 2mA

I_C= 20mA, I_B= 2mA

h_FE

180

700

0.6

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

V_CB= 5V, I_E= –2mA, f = 200MHz

V_CE= 40V, I_C= 2mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

200

MHz

Noise voltage

150

^*h_FERank classification

Rank

h_FE

180 ~ 360

260 ~ 520

360 ~ 700

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

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