Transistor
2SD0973, 2SD0973A (2SD973, 2SD973A)
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9 0.1
2.5 0.1
1.0
1.5
1.5 R0.9
Features
I
G
R0.9
Low collector to emitter saturation voltage VCE(sat)
.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R0.7
0.85
Absolute Maximum Ratings (Ta=25˚C)
I
0.55 0.1
0.45 0.05
Parameter
Symbol
Ratings
Unit
Collector to
2SD0973
2SD0973A
2SD0973
30
VCBO
V
3
2
1
base voltage
Collector to
60
25
VCEO
V
emitter voltage 2SD0973A
Emitter to base voltage
Peak collector current
Collector current
50
2.5
2.5
VEBO
ICP
5
V
A
1:Base
1.5
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
IC
1
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
ICBO
Conditions
VCB = 20V, IE = 0
min
typ
max
Unit
Collector cutoff current
0.1
µA
Collector to base
voltage
2SD0973
2SD0973A
30
60
25
50
5
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SD0973
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SD0973A
Emitter to base voltage
IE = 10µA, IC = 0
*1
hFE1
hFE2
VCE = 10V, IC = 500mA*2
85
50
160
100
0.2
340
Forward current transfer ratio
VCE = 5V, IC = 1A*2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
0.4
1.2
V
V
0.85
200
11
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0. f = 1MHz
MHz
pF
Collector output capacitance
Cob
20
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
Q
R
S
Note.) The Part numbers in the Parenthesis show conventional
part number.
85 ~ 170
120 ~ 240
170 ~ 340
1