Datasheet > 2SD1000

2SD1000

更新时间： 2024-11-18 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管放大器
页数	文件大小	规格书
1页	51K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册

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2SD1000 数据手册

SMD Type

Transistors

NPN Silicon Epitaxial Transistor

2SD1000

Features

World standard miniature package:SOT-89.

Low collector saturation voltage.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

0.7

Collector current (DC)

Collector Current (pulse) *

Total power dissipation

Junction temperature

Storage temperature

I^C

1.0

P^T

2.0

T^j

150

Tstg

-55 to +150

* Pulse Test PW

10ms, Duty Cycle

50%.

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

100

400

Unit

VCB = 60 V, IE = 0 A

VEB = 5.0 V, IC = 0 A

V^CE= 1.0 V, IC = 100 mA

V^CE= 1.0 V, IC = 500 mA

200

150

0.12

0.9

DC current gain *

h^FE

Collector saturation voltage *

Base saturation voltage *

Base-emitter voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)IC = 500 mA, IB = 50 mA

V^BE(sat)IC = 500 mA, IB = 50 mA

0.4

1.2

700

V^BE

f^T

VCE = 6.0 V, IC = 10 mA

VCE = 6.0 V, IE = -10 mA

VCB = 6 V, IE = 0, f = 1.0 MHz

600

635

110

MHz

C^ob

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

hFE

90 180

135 270

200 400

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