是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.27 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.7 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 135 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 110 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1000LM | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 700MA I(C) | TO-243 | |
2SD1000LM-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,700MA I(C),TO-243 | |
2SD1000LM-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, POWER, | |
2SD1000LM-T1 | RENESAS |
获取价格 |
700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN | |
2SD1000LM-T1-AY | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,700MA I(C),TO-243 | |
2SD1000LM-T2 | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, POWER, | |
2SD1000LM-T2-AZ | RENESAS |
获取价格 |
700mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD, SC-62, 3 PIN | |
2SD1000-M | KEXIN |
获取价格 |
NPN Transistors | |
2SD1000-M-HF | KEXIN |
获取价格 |
NPN Transistors | |
2SD1000-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, POWER, |