Datasheet > 2SD0973A(2SD973A)

2SD0973A(2SD973A)

更新时间： 2024-11-17 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
4页	94K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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Transistors

2SD0973A (2SD973A)

Silicon NPN epitaxial planar type

For low-frequency driver amplification

Unit: mm

2.5 0.1

6.9 0.1

(1.5)

(1.0)

(1.5)

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R 0.9

R 0.7

■ Absolute Maximum Ratings T_a= 25°C

(0.85)

0.55 0.1

0.45 0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

1: Base

2: Collector

3: Emitter

(2.5) (2.5)

Peak collector current

I_CP

1.5

M-A1 Package

Collector power dissipation ^*

Junction temperature

P_C

°C

T_j

150

Storage temperature

T_stg

−55 to +150

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

board thickness of 1.7 mm for the collector portion

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Conditions

I_C= 10 µA, I_E= 0

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

V_CB= 20 V, I_E= 0

V_CE= 10 V, I_C= 500 mA

V_CE= 5 V, I_C= 1 A

0.1

µA



Forward current transfer ratio ^*

h_FE1

h_FE2

340

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= 500 mA, I_B= 50 mA

V_BE(sat)I_C= 500 mA, I_B= 50 mA

0.2

0.85

200

0.4

1.2

Base-emitter saturation voltage ^*

Transition frequency

f_T

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE1

85 to 170

120 to 240

170 to 340

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002

SJC00203CED

12 3 4

中文翻译

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与2SD0973A(2SD973A)相关器件

型号	品牌	获取价格	描述	数据表
2SD0973AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SC-71
2SD0973AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SC-71
2SD0973AS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SC-71
2SD0973Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| SC-71
2SD0973R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| SC-71
2SD0973S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1A I(C) \| SC-71
2SD1000	TYSEMI	获取价格	World standard miniature package:SOT-89. Low collector saturation voltage.
2SD1000	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SD1000	KEXIN	获取价格	NPN Silicon Epitaxial Transistor
2SD1000_15	KEXIN	获取价格	NPN Transistors

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