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2SD0968AS PDF预览

2SD0968AS

更新时间: 2024-11-18 13:04:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体驱动器小信号双极晶体管放大器
页数 文件大小 规格书
3页 73K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MINIP3-F1, 3 PIN

2SD0968AS 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):185
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SD0968AS 数据手册

 浏览型号2SD0968AS的Datasheet PDF文件第2页浏览型号2SD0968AS的Datasheet PDF文件第3页 
Transistors  
2SD0968A (2SD968A)  
Silicon NPN epitaxial planar type  
Unit: mm  
4.5 0.1  
1.6 0.2  
For low-frequency driver amplification  
1.5 0.1  
Complementary to 2SB0789A (2SB789A)  
Features  
3
(Base open) V  
1
2
High  
collector-emitter voltage  
CEO  
0.4 0.08  
1.5 0.1  
0.5 0.08  
0.4 0.04  
Large collector power dissipation PC  
Mini power type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine packing  
3˚  
Absolute Maximum Ratings Ta = 25°C  
45˚  
3.0 0.15  
Parameter  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
Symbol  
Rating  
Unit  
V
120  
1: Base  
2: Collector  
3: Emitter  
120  
V
5
V
MiniP3-F1 Package  
Peak collector current  
Collector current  
ICP  
IC  
1
A
Marking Symbol: V  
0.5  
A
Collector power dissipation *  
Junction temperature  
Storage temperature  
PC  
Tj  
1
W
°C  
°C  
150  
Tstg  
55 to +150  
Note) : Print circuit board: Copper foil area of 1 cm2 or more, and the board  
*
thickness of 1.7 mm for the collector portion.  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCEO  
Conditions  
IC = 100 µA, IB = 0  
Min  
120  
5
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Forward current transfer ratio *1  
VEBO  
IE = 10 µA, IC = 0  
V
*2  
hFE1  
VCE = 10 V, IC = 150 mA  
VCE = 5 V, IC = 500 mA  
130  
50  
330  
hFE2  
Collector-emitter saturation voltage *1  
Base-emitter saturation voltage *1  
Transition frequency  
VCE(sat) IC = 500 mA, IB = 50 mA  
VBE(sat) IC = 500 mA, IB = 50 mA  
0.2  
0.85  
120  
0.6  
V
V
1.20  
fT  
VCB = 10 V, IE = −50 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
R
S
hFE1  
130 to 220  
185 to 330  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJC00202DED  
1

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