Datasheet > 2SD0966Q

2SD0966Q

更新时间： 2024-11-17 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 5A I(C) \| SC-51

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中文翻译

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数据手册

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2SD0966Q 数据手册

Transistor

2SD0966 (2SD966)

Silicon NPN epitaxial planer type

For low-frequency power amplification

For stroboscope

Unit: mm

5.9 0.2

4.9 0.2

Features

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory operation performances at high efficiency with the

low-voltage power supply.

0.7 0.1

2.54 0.15

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

0.45^+–0.2¹

0.45⁺–0⁰.^.1²

1.27

1:Emitter

2:Collector

3:Base

I_C

EIAJ:SC–51

TO–92L Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 10V, I_E= 0

I_EBO

V_EB= 7V, I_C= 0

0.1

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 2A^*2

I_C= 3A, I_B= 0.1A^*2

h_FE1

h_FE2

230

150

600

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

MHz

Transition frequency

f_T

V_CB= 6V, I_E= –50mA, f = 200MHz

V_CB= 20V, I_E= 0, f = 1MHz

150

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

230 ~ 380

340 ~ 600

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

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