Datasheet > 2SD0968A(2SD968A)

2SD0968A(2SD968A)

更新时间： 2024-11-17 23:20:23

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小信号デバイス－小信号トランジスタ－汎用低周波増幅

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2SD0968A(2SD968A) 数据手册

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Transistors

2SD0968A (2SD968A)

Silicon NPN epitaxial planar type

Unit: mm

4.5 0.1

1.6 0.2

For low-frequency driver amplification

1.5 0.1

Complementary to 2SB0789A (2SB789A)

■ Features

(Base open) V

• High

collector-emitter voltage

CEO

0.4 0.08

1.5 ^0.1

0.5 0.08

0.4 0.04

• Large collector power dissipation P_C

• Mini power type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine packing

3˚

■ Absolute Maximum Ratings T_a= 25°C

45˚

3.0 0.15

Parameter

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

Symbol

Rating

Unit

120

1: Base

2: Collector

3: Emitter

120

MiniP3-F1 Package

Peak collector current

Collector current

I_CP

I_C

Marking Symbol: V

0.5

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

T_j

°C

150

T_stg

−55 to +150

Note) : Print circuit board: Copper foil area of 1 cm²or more, and the board

thickness of 1.7 mm for the collector portion.

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

Conditions

I_C= 100 µA, I_B= 0

Min

120

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Forward current transfer ratio ^*1

V_EBO

I_E= 10 µA, I_C= 0

h_FE1

V_CE= 10 V, I_C= 150 mA

V_CE= 5 V, I_C= 500 mA

130

330

h_FE2

Collector-emitter saturation voltage ^*1

Base-emitter saturation voltage ^*1

Transition frequency

V_CE(sat)I_C= 500 mA, I_B= 50 mA

V_BE(sat)I_C= 500 mA, I_B= 50 mA

0.2

0.85

120

0.6

1.20

f_T

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE1

130 to 220

185 to 330

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJC00202DED

12 3

中文翻译

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与2SD0968A(2SD968A)相关器件

型号	品牌	获取价格	描述	数据表
2SD0968AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0968AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0968AS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD0968G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD0968GR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD0968GS	PANASONIC	获取价格	暂无描述
2SD0968Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0968R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SC-62
2SD0973/2SD0973A(2SD973/2SD973A)	ETC	获取价格	2SD0973. 2SD0973A (2SD973. 2SD973A) - NPN Transistor
2SD0973A	PANASONIC	获取价格	For Low-Frequency Driver Amplification

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