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2SD0965 PDF预览

2SD0965

更新时间: 2024-02-02 00:02:39
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管ISM频段放大器
页数 文件大小 规格书
3页 81K
描述
Silicon NPN epitaxial planar type

2SD0965 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92包装说明:ROHS COMPLIANT, TO-92-B1, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):230
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SD0965 数据手册

 浏览型号2SD0965的Datasheet PDF文件第2页浏览型号2SD0965的Datasheet PDF文件第3页 
Transistors  
2SD0965 (2SD965)  
Silicon NPN epitaxial planar type  
For low-frequency power amplification  
For stroboscope  
Unit: mm  
5.0 0.2  
4.0 0.2  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Satisfactory operation performances at high efficiency with the low-  
voltage power supply.  
0.7 0.1  
Absolute Maximum Ratings Ta = 25°C  
+0.15  
+0.15  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
0.45  
0.45  
–0.1  
–0.1  
+0.6  
+0.6  
2.5  
–0.2  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
40  
2.5  
–0.2  
20  
V
1
2 3  
7
V
1: Emitter  
2: Collector  
3: Base  
5
A
Peak collector current  
ICP  
8
750  
A
TO-92-B1 Package  
Collector power dissipation  
Junction temperature  
PC  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
20  
7
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IC = 1 mA, IB = 0  
IE = 10 µA, IC = 0  
VCB = 10 V, IE = 0  
VCE = 10 V, IB = 0  
VEB = 7 V, IC = 0  
VCE = 2 V, IC = 0.5 A  
VCE = 2 V, IC = 1 A  
V
0.1  
1
µA  
µA  
µA  
ICEO  
IEBO  
0.1  
600  
*
hFE1  
230  
150  
hFE2  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 3 A, IB = 0.1 A  
0.28  
150  
26  
1.00  
50  
V
MHz  
pF  
fT  
VCB = 6 V, IE = −50 mA, f = 200 MHz  
VCB = 20 V, IE = 0, f = 1 MHz  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
hFE1  
230 to 380  
340 to 600  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: January 2003  
SJC00200BED  
1

2SD0965 替代型号

型号 品牌 替代类型 描述 数据表
2SD965 BL Galaxy Electrical

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