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2SC6102 PDF预览

2SC6102

更新时间: 2024-10-14 03:56:35
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三洋 - SANYO 晶体转换器晶体管
页数 文件大小 规格书
5页 45K
描述
PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

2SC6102 数据手册

 浏览型号2SC6102的Datasheet PDF文件第2页浏览型号2SC6102的Datasheet PDF文件第3页浏览型号2SC6102的Datasheet PDF文件第4页浏览型号2SC6102的Datasheet PDF文件第5页 
Ordering number : ENA0463  
SANYO Sem iconductors  
DATA S HEET  
PNP / NPN Epitaxial Planar Silicon Transistors  
2SA2197 / 2SC6102  
DC / DC Converter Applications  
Applications  
Relay drivers, lamp drivers, motor drivers, flash.  
Features  
Adoption of MBIT process.  
Large current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
High allowable power dissipation.  
Specifications ( ) : 2SA2197  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
(--30)40  
(--)30  
(--)6  
(--)7  
(--)9  
(--)1.2  
1
V
V
I
A
C
Collector Current (Pulse)  
Base Current  
I
A
CP  
I
B
A
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
10  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=(--)30V, I =0A  
Unit  
min  
max  
I
V
CB  
V
EB  
V
CE  
V
CE  
V
CB  
(--)0.1  
(--)0.1  
560  
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(--)4V, I =0A  
C
EBO  
h
FE  
=(--)2V, I =(--)500mA  
200  
C
Gain-Bandwidth Product  
Output Capacitance  
f
T
=(--)10V, I =(--)500mA  
C
(250)290  
(52)40  
MHz  
pF  
Cob  
=(--)10V, f=1MHz  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
92706EA MS IM TC-00000207 No. A0463-1/5  

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