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2SC6134 PDF预览

2SC6134

更新时间: 2024-11-18 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器开关晶体管功率双极晶体管光电二极管放大器
页数 文件大小 规格书
4页 150K
描述
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

2SC6134 技术参数

生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.77
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SC6134 数据手册

 浏览型号2SC6134的Datasheet PDF文件第2页浏览型号2SC6134的Datasheet PDF文件第3页浏览型号2SC6134的Datasheet PDF文件第4页 
2CS6134  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC6134  
High-Speed Switching Applications  
Unit: mm  
DC-DC Converter Applications  
Strobe Applications  
2.1±0.1  
1.7±0.1  
High DC current gain: h  
= 250 to 400 (I = 0.3A)  
1
2
FE C  
Low collector-emitter saturation voltage: V  
= 0.14 V (max)  
CE (sat)  
3
High-speed switching: t = 25 ns (typ.)  
f
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
50  
50  
V
V
V
V
CBO  
1 :Gate  
2 :Source  
3 :Drain  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CEX  
CEO  
EBO  
V
V
30  
6
UFM  
DC  
I
3.0  
C
Collector current  
A
A
JEDEC  
JEITA  
Pulse  
I
5.0  
CP  
Base current  
I
0.3  
B
P
P
800  
500  
150  
55 to 150  
TOSHIBA  
2-2U1A  
C (Note1)  
C (Note2)  
Collector power dissipation  
mW  
Weight: 6.6 mg (typ.)  
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
stg  
Note1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )  
Note2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )  
Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2010-03-07  

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