Datasheet > 2SC6127(TE16L1)

2SC6127(TE16L1)

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	150K
描述
TRANSISTOR,BJT,NPN,800V V(BR)CEO,50MA I(C),TO-252

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技术参数
数据手册

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2SC6127(TE16L1) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	15
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	10 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SC6127(TE16L1) 数据手册

2SC6127

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC6127

High Voltage Switching Applications

Unit: mm

High Voltage Amplifier Applications

•

High voltage: V

= 800 V

CEO

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

800

Collector-emitter voltage

Emitter-base voltage

Collector current

800

Base current

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

JEDEC

JEITA

―

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4 5

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