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2SC6125 PDF预览

2SC6125

更新时间: 2024-10-14 12:50:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关放大器晶体管功率双极晶体管功率放大器
页数 文件大小 规格书
5页 156K
描述
High-Speed Switching Applications Power Amplifier Applications

2SC6125 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PW-MINI, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77最大集电极电流 (IC):4 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC6125 数据手册

 浏览型号2SC6125的Datasheet PDF文件第2页浏览型号2SC6125的Datasheet PDF文件第3页浏览型号2SC6125的Datasheet PDF文件第4页浏览型号2SC6125的Datasheet PDF文件第5页 
2SC6125  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC6125  
High-Speed Switching Applications  
Power Amplifier Applications  
Unit : mm  
• High DC current gain: h = 180 to 390 (I = 0.5 A)  
FE  
C
• Low collector-emitter saturation: V  
= 0.2 V (max)  
CE (sat)  
• High-speed switching: t = 15 ns (typ.)  
f
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
(Note 1)  
20  
6
DC  
I
4
C
A
A
Pulse  
I
7
0.4  
CP  
JEDEC  
JEITA  
Base current  
I
B
SC-62  
2-5K1A  
DC  
PC  
PC  
1
Collector power dissipation  
(Note 2)  
W
TOSHIBA  
2.5  
t = 10 s  
Weight: 0.05 g (typ.)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.  
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-09-24  

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