2SC6135,LF(B

更新时间： 2024-09-13 12:58:51

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2SC6135,LF(B 数据手册

2SC6135

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6135

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

2.1±0.1

1.7±0.1

•

High DC current gain: h

= 400 to 1000 (I = 0.1A)

FE C

Low collector-emitter saturation voltage: V

= 0.17 V (max)

CE (sat)

High-speed switching: t = 85 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

100

CBO

1: Gate

2: Source

3: Drain

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

UFM

1.0

Collector current

JEDEC

JEITA

―

Pulse

2.0

Base current

0.1

TOSHIBA

2-2U1A

800

500

150

−55 to 150

Collector power dissipation

C (Note1)

C (Note2)

Weight: 6.6 mg (typ.)

Junction temperature

°C

Storage temperature range

stg

Note1: Mounted on ceramic board.

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)

Note2: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-07

12 3 4

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