Datasheet > 2SC6135,LF

2SC6135,LF

更新时间： 2024-10-30 18:15:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	282K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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2SC6135,LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	5.75	Base Number Matches：	1

2SC6135,LF 数据手册

2SC6135

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6135

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

2.1±0.1

1.7±0.1

•

High DC current gain: h = 400 to 1000 (I = 0.1A)

Low collector-emitter saturation voltage: V

= 0.17 V (max)

CE (sat)

High-speed switching: t = 85 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

100

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

1: Base

2: Emitter

3: Collector

UFM

1.0

Collector current

Pulse

2.0

JEDEC

JEITA

―

Base current

0.1

(Note 1)

(Note 2)

800

500

150

-55 to 150

Collector power dissipation

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

Junction temperature

°C

Storage temperature range

stg

Note 1: Mounted on ceramic board.

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)

Note 2: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Start of commercial production

2007-08

Toshiba Electronic Devices & Storage Corporation

2017-07-31

12 3 4

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