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2SC6124 PDF预览

2SC6124

更新时间: 2024-11-18 12:50:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关放大器电源开关功率放大器
页数 文件大小 规格书
5页 207K
描述
Power Amplifier Applications Power Switching Applications

2SC6124 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SC6124 数据手册

 浏览型号2SC6124的Datasheet PDF文件第2页浏览型号2SC6124的Datasheet PDF文件第3页浏览型号2SC6124的Datasheet PDF文件第4页浏览型号2SC6124的Datasheet PDF文件第5页 
2SC6124  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC6124  
Power Amplifier Applications  
Unit: mm  
Power Switching Applications  
Low collector emitter saturation voltage  
: V  
= 0.5 V (max) (I = 1 A)  
C
CE (sat)  
High-speed switching: t = 400 ns (typ.)  
stg  
Complementary to 2SA2206  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
160  
V
V
V
V
A
A
A
CBO  
V
160  
CEX  
CEO  
EBO  
1 : BASE  
2 : COLLECTOR (HEAT SINK)  
3 : EMITTER  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
80  
7
DC  
I
2
4
JEDEC  
C
Pulse  
I
CP  
JEITA  
SC-62  
2-5K1A  
Base current  
I
0.5  
B
TOSHIBA  
t = 10 s  
DC  
P
2.5  
C
Weight: 0.05 g (typ.)  
Collector power dissipation  
W
(Note 1)  
1.0  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-10-19  

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