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2SC6105 PDF预览

2SC6105

更新时间: 2024-10-15 14:58:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 170K
描述
Not Recommended for New Design

2SC6105 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
风险等级:5.77最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:600 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:0.2 W表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:1 V
Base Number Matches:1

2SC6105 数据手册

 浏览型号2SC6105的Datasheet PDF文件第2页浏览型号2SC6105的Datasheet PDF文件第3页浏览型号2SC6105的Datasheet PDF文件第4页浏览型号2SC6105的Datasheet PDF文件第5页 
2SC6105  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)  
2SC6105  
High Voltage Switching Applications  
Unit: mm  
High voltage:  
V
= 600 V (max)  
CEO  
Low saturation voltage: V  
(1) = 1.0 V (max)  
CE (sat)  
@I = 20 mA, I = 0.5 mA  
C
B
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
600  
600  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
7
DC  
I
50  
C
Collector current  
mA  
PULSE  
I
100  
CP  
Base current  
I
25  
mA  
mW  
°C  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
150  
j
JEDEC  
JEITA  
TO-236MOD  
T
stg  
55 to 150  
°C  
SC-59  
TOSHIBA  
2-3F1A  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
Weight: 12 mg (typ.)  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
H Z  
1
2009-06-02  

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