Datasheet > 2SC6124(TE12L,F)

2SC6124(TE12L,F)

更新时间： 2024-11-19 05:44:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	201K
描述
TRANSISTOR,BJT,NPN,80V V(BR)CEO,2A I(C),SC-62

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2SC6124(TE12L,F) 数据手册

2SC6124

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6124

Power Amplifier Applications

Unit: mm

Power Switching Applications

Low collector emitter saturation voltage

: V

= 0.5 V (max) (I = 1 A)

CE (sat)

High-speed switching: t = 400 ns (typ.)

stg

Complementary to 2SA2206

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

160

CBO

160

CEX

CEO

EBO

1 : BASE

2 : COLLECTOR (HEAT SINK)

3 : EMITTER

Collector-emitter voltage

Emitter-base voltage

Collector current

JEDEC

⎯

Pulse

JEITA

SC-62

2-5K1A

Base current

0.5

TOSHIBA

t = 10 s

2.5

Weight: 0.05 g (typ.)

Collector power dissipation

(Note 1)

1.0

Junction temperature

150

°C

Storage temperature range

−55 to 150

stg

Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-10-19

12 3 4 5

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