Datasheet > 2SC5583

2SC5583

更新时间： 2024-09-12 22:52:47

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松下 - PANASONIC		/
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描述
Silicon NPN triple diffusion mesa type(For horizontal deflection output)

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中文翻译

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数据手册

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2SC5583 数据手册

Power Transistors

2SC5583

Silicon NPN triple diffusion mesa type

Unit: mm

For horizontal deflection output

20.0 0.5

5.0 0.3

(3.0)

φ 3.3 0.2

I Features

• High breakdown voltage, and high reliability through the use of a

glass passivation layer

• High-speed switching

(1.5)

• Wide area of safe operation (ASO)

(1.5)

2.0 0.3

2.7 ^0.3

3.0 0.3

1.0 0.2

I Absolute Maximum Ratings T_C= 25°C

0.6 0.2

5.45 0.3

Parameter

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_CP

Rating

Unit

10.9 0.5

Collector to base voltage

Collector to emitter voltage

1 500

1: Base

2: Collector

3: Emitter

600

Emitter to base voltage

Peak collector current

Collector current

Base current

TOP-3L Package

Marking Symbol: C5583

Internal Connection

I_C

I_B

T_C= 25°C

T_a= 25°C

P_C

150

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

µA

Collector cutoff current

I_CBO

V_CB= 1 000 V, I_E= 0

V_CB= 1 500 V, I_E= 0

µA

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

I_EBO

h_FE

V_EB= 7 V, I_C= 0

V_CE= 5 V, I_C= 8.5 A

V_CE(sat)

V_BE(sat)

f_T

I_C= 8.5 A, I_B= 2.13 A

V_CE= 10 V, I_C= 0.1 A, f = 0.5 MHz

I_C= 8.5 A, Resistance loaded

I_B1= 2.13 A, I_B2= −4.25 A

1.5

MHz

µs

Storage time

t_stg

2.7

0.2

Fall time

t_f

µs

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