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2SC5585H PDF预览

2SC5585H

更新时间: 2024-02-12 12:54:56
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
2页 62K
描述
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | SOT-416

2SC5585H 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-75A
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.13Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):320 MHz
Base Number Matches:1

2SC5585H 数据手册

 浏览型号2SC5585H的Datasheet PDF文件第2页 
2SC5585H  
Transistors  
Low Frequency Transistor (50V, 2A)  
2SC5585H  
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes.  
!External dimensions (Units : mm)  
!Features  
1) High current.  
2) Low VCE(sat).  
VCE(sat) 250mV  
at IC=200mA/IB=10mA  
3) Flat lead  
1.6  
0.85  
(
)
2
(
)
1
( )  
3
!Structure  
For switching  
For muting  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : EMT3 Flat lead  
EIAJ : SC-89  
Abbreviated symbol : BX  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
15  
Unit  
Collectot-base voltage  
Collector-emitter voltage  
VCBO  
CEO  
V
V
V
12  
I
C
500  
mA  
A
Collector current  
I
CP  
1
Collector power dissipation  
Junction temperature  
150  
P
C
mW  
°C  
°C  
Tj  
150  
Storage temperature  
Tstg  
55~+150  
Single pulse Pw=1ms  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
15  
12  
6
V
V
I
I
I
C
=10µA  
Collectoe-emitter brakdown voltage BVCEO  
C=1mA  
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E
=10µA  
I
CBO  
CE(sat)  
FE  
100  
250  
680  
nA  
mV  
V
CB=15V  
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
V
90  
IC/IB 200mA/10mA  
h
V
V
V
CE=2V, I  
C
=10mA  
=10mA, f=100MHz  
C =10V, IE=0A, f=1MHz  
270  
fT  
320  
7.5  
MHz  
pF  
CE=2V, IE  
Output capacitance  
Cob  

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