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2SC5585 PDF预览

2SC5585

更新时间: 2024-01-02 09:21:54
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 70K
描述
Low frequency transistor (12V, 0.5A)

2SC5585 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-75A
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.13Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):320 MHz
Base Number Matches:1

2SC5585 数据手册

 浏览型号2SC5585的Datasheet PDF文件第2页浏览型号2SC5585的Datasheet PDF文件第3页 
2SC5585 / 2SC5663  
Transistors  
Low frequency transistor (12V, 0.5A)  
2SC5585 / 2SC5663  
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.  
zExternal dimensions (Unit : mm)  
zApplications  
For switching  
For muting  
2SC5585  
( )  
1
( )  
2
( )  
3
0.8  
1.6  
zFeatures  
1) High current.  
2) Low VCE(sat).  
0.1Min.  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : EMT3  
EIAJ : SC-75A  
JEDEC : SOT-416  
VCE(sat) 250mV at IC = 200mA / IB = 10mA  
Abbreviated symbol : BX  
2SC5663  
1.2  
0.2 0.8 0.2  
( )  
2
(3)  
( )  
1
0.15Max.  
(1) Base  
(2) Emitter  
(3) Collector  
ROHM : VMT3  
Abbreviated symbol : BX  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collectot-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
15  
12  
V
6
V
I
C
500  
mA  
A
Collector current  
I
CP  
1
150  
Collector power dissipation  
P
C
mW  
°C  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
Single pulse Pw = 1ms  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
BVCBO  
15  
12  
6
I
I
I
C
C
E
= 10µA  
Collectoe-emitter brakdown voltage BVCEO  
V
= 1mA  
= 10µA  
CB = 15V  
CB = 6V  
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
CBO  
V
I
100  
100  
250  
680  
nA  
nA  
mV  
V
V
Emitter cutoff current  
I
EBO  
CE(sat)  
FE  
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
V
90  
I
C
= 200mA, I  
B
= 10mA  
= 10mA  
= 10mA, f = 100MHz  
= 0A, f = 1MHz  
h
V
V
V
CE = 2V, I  
C
270  
f
T
320  
7.5  
MHz  
pF  
CE = 2V, I  
E
Output capacitance  
Cob  
CB = 10V, I  
E
Rev.B  
1/2  

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