Datasheet > 2SC5585

2SC5585

更新时间： 2024-09-14 14:53:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	525K
描述
SOT-523

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中文翻译

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技术参数
数据手册

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2SC5585 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

2SC5585 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Transistors

SOT-523

2SC5585

TRANSISTOR (NPN)

FEATURES

High current.

Low V_CE(sat). V_CE(sat)≤250mV at I_C= 200mA / I_B= 10mA

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: BX

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Operation Junction and Storage Temperature Range

0.5

P_C

0.15

-55-150

℃

T_J,T_stg

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=10μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA, I_B=0

I_E=10μA, I_C=0

V_CB=15 V, I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=6V, I_C=0

0.1

DC current gain

h_FE

V_CE=2V, I_C=10mA

I_C=200mA,I_B=10mA

V_CE=2V,I_C=10mA, f=100MHz

V_CB=10V,I_E=0,f=1MHz

270

680

0.25

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

MHz

320

f_T

Collector output capacitance

C_ob

7.5

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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