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2SC5398_12 PDF预览

2SC5398_12

更新时间: 2024-10-28 12:31:07
品牌 Logo 应用领域
谏早电子 - ISAHAYA /
页数 文件大小 规格书
3页 184K
描述
For Low Frequency Amplify Application Silicon NPN Epitaxial Type Micro

2SC5398_12 数据手册

 浏览型号2SC5398_12的Datasheet PDF文件第2页浏览型号2SC5398_12的Datasheet PDF文件第3页 
〈transistor〉  
2SC5398  
For Low Frequency Amplify Application  
Silicon NPN Epitaxial Type Micro(Frame type)  
DESCRIPTION  
OUTLINE DRAWING  
UNIT:mm  
2SC5398 is a silicon NPN epitaxial type transistor.  
It is designed for low frequency voltage amplify  
application.  
TERMINAL CONNECTOR  
①:EMITTER  
EIAJ: -  
JEDEC: -  
②:COLLECTOR  
③:BASE  
MAXIMUM RATINGS(Ta=25℃)  
Unit  
V
Symbol  
VCBO  
VEBO  
VCEO  
IC  
Parameter  
Collector to Base voltage  
Emitter to Base voltage  
Collector to Emitter voltage  
Collector current  
Ratings  
MARKING  
50  
6
V
3 9 8  
Q
50  
V
100  
mA  
mW  
□□  
PC  
450  
Collector dissipation  
Tj  
+150  
-55~+150  
Junction temperature  
Storage temperature  
hFE Item  
Type name  
Tstg  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Typ  
Parameter  
Symbol  
Test conditions  
Unit  
Min  
Max  
V(BR)CEO  
ICBO  
IEBO  
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
IC= 100μA , RBE= ∞  
50  
-
-
-
-
0.5  
0.5  
560  
-
V
μA  
μA  
-
V CB= 50V , I E= 0mA  
V EB= 4V , I C= 0mA  
V CE = 6V , IC= 1mA  
-
(※)  
-
hFE  
DC forward current gain ※  
DC forward current gain  
C to E Saturation voltage  
Gain bandwidth product  
Collector output capacitance  
120  
70  
-
hFE  
V
CE = 6V , IC= 0.1mA  
-
VCE(sat)  
fT  
IC =30mA , I B= 1.5mA  
V CE= 6V , I E= -10mA  
V CB= 6V , I E= 0mA,f=1MHz  
0.3  
-
V
-
200  
2.0  
MHz  
pF  
Cob  
-
-
※:It shows hFE classification at right table.  
Item  
hFE  
Q
R
S
120~270 180~390  
270~560  
ISAHAYA ELECTRONICS CORPORATION  

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