2SC5407

更新时间： 2024-01-21 18:32:36

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	223K
描述
Silicon NPN Power Transistor

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2SC5407 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC5407

DESCRIPTION

·High Breakdown Voltage-

: V_CBO= 1700V (Min)

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

1700

600

UNIT

Collector Current- Continuous

Collector Current- Peak

Base Current- Continuous

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

100

P_C

Collector Power Dissipation

@ T_a=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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