Datasheet > 2SC5337QR-T1

2SC5337QR-T1

更新时间： 2024-02-17 07:14:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	51K
描述
TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 250MA I(C) \| TO-243

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2SC5337QR-T1 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5337

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

FEATURES

•

Low distortion: IM²= 59.0 dB TYP., IM³= 82.0 dB TYP. @ V^CE= 10 V, I^C= 50 mA

Low noise

NF = 1.5 dB TYP. @ V^CE= 10 V, I^C= 10 mA, f = 500 MHz

NF = 2.0 dB TYP. @ V^CE= 10 V, I^C= 10 mA, f = 1 GHz

4-pin power minimold package with improved gain from the 2SC3356

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5337

25 pcs (Non reel)

1 kpcs/reel

• Magazine case

2SC5337-T1

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

250

tot ^Note

2.0

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10939EJ2V0DS00 (2nd edition)

Date Published August 2001 NS CP(K)

The mark • shows major revised points.

1996, 2001

Printed in Japan

12 3 4 5 6 7 8

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2SC5337QS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 250MA I(C) \| TO-243
2SC5337-QS	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-QS	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4
2SC5337-QS-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337QS-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5337QS-T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 250MA I(C) \| TO-243
2SC5337QS-T1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243
2SC5337-T1	RENESAS	获取价格	NPN Silicon RF Transistor for High-Frequency
2SC5337-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC5337-T1-AZ	RENESAS	获取价格	NPN Silicon RF Transistor for High-Frequency