生命周期: | Obsolete | 包装说明: | POWER, MINIMOLD PACKAGE-4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
其他特性: | LOW NOISE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.25 A | 集电极-发射极最大电压: | 15 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5337-QS-A | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337QS-AZ | RENESAS |
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TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243 | |
2SC5337QS-T1 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 | |
2SC5337QS-T1-AZ | RENESAS |
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TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243 | |
2SC5337-T1 | RENESAS |
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NPN Silicon RF Transistor for High-Frequency | |
2SC5337-T1-A | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337-T1-AZ | RENESAS |
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NPN Silicon RF Transistor for High-Frequency | |
2SC5337-T1QQ | NEC |
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RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC5337-T1-QQ | RENESAS |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-4 | |
2SC5337-T1QQ-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Sili |